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Focussing on the specific physical and chemical properties of centres in semiconductors with shallow energy levels and electronic distributions of an extended size, this volume includes reports on the most advanced experimental and theoretical methods for identifying and further characterizing these materials. Attention is given to such topics as shallow-level centres in host semiconductors of lower dimensionality, centres in wide-bandgap semiconductors, shallow excited states of centres with deep ground states, passivation of centres, and other aspects of impurity control during crystal growth and processing with its relevance to applications.